Boosting the performance of resistive switching memory with a transparent ITO electrode using supercritical fluid nitridation

A low temperature supercritical fluid nitridation (SCF-nitridation) technique was investigated to dope nitrogen into a indium-tin-oxide (ITO) electrode to boost the performance of hafnium oxide resistive random access memory (RRAM). After the SCF-nitridation treatment, the memory window for the N:ITO electrode device was increased from 40 to 100. Moreover, the operation voltages (VSET and VRESET) and currents (ION and IOFF) were remarkably decreased, in which the IOFF was decreased to 65 nA. The possible reason for the performance improvement of resistive switching memory with the ITO transparent electrode induced by SCF-nitridation treatment was carefully explored.